Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

DirectFET™ Isometric MT

Number of Pins  

7

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

34A Ta 192A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

2.8W Ta 89W Tc

Turn Off Delay Time  

25 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.35V @ 150μA

Operating Temperature  

-40°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2013

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

ULTRA LOW RESISTANCE

Terminal Position  

BOTTOM

JESD-30 Code  

R-XBCC-N3

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.8W

Case Connection  

DRAIN

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5m Ω @ 32A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6140pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

77nC @ 4.5V

Rise Time  

30ns

Vgs (Max)  

±20V

Fall Time (Typ)  

17 ns

Continuous Drain Current (ID)  

34A

Threshold Voltage  

1.7V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

250A

Avalanche Energy Rating (Eas)  

260 mJ

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free